Today, Samsung Electronics has announced that it has begun mass production of 3nm semiconductors, becoming the first foundry company to do so worldwide.
The breakthrough to 3nm comes as a result of Samsung switching to GAAFET (gate-all-around field-effect transistor) technology for the new chips – more specifically, to the company’s own nanosheet innovation known as Multi-Bridge-Channel FET (MBCFET™).
The new technology makes use of nanosheets with wider channels, rather than the nanowires and narrower channels of older GAA technologies, allowing for significant improvements in crucial power…
